High mobility, low voltage operating C-60 based n-type organic field effect transistors

Schwabegger, G., Ullah, Mujeeb, Irimia-Vladu, M., Baumgartner, M., Kanbur, Y., Ahmed, R., Stadler, P., Bauer, S., Sariciftci, N. S. and Sitter, H. (2011) High mobility, low voltage operating C-60 based n-type organic field effect transistors. Synthetic Metals, 161 19-20: 2058-2062. doi:10.1016/j.synthmet.2011.06.042


Author Schwabegger, G.
Ullah, Mujeeb
Irimia-Vladu, M.
Baumgartner, M.
Kanbur, Y.
Ahmed, R.
Stadler, P.
Bauer, S.
Sariciftci, N. S.
Sitter, H.
Title High mobility, low voltage operating C-60 based n-type organic field effect transistors
Formatted title
High mobility, low voltage operating C60 based n-type organic field effect transistors
Journal name Synthetic Metals   Check publisher's open access policy
ISSN 0379-6779
Publication date 2011-10
Sub-type Article (original research)
DOI 10.1016/j.synthmet.2011.06.042
Volume 161
Issue 19-20
Start page 2058
End page 2062
Total pages 5
Place of publication Lausanne, Switzerland
Publisher Elsevier
Language eng
Formatted abstract
We report on C60 based organic field effect transistors (OFETs) that are well optimized for low voltage operation. By replacing commonly used dielectric layers by thin parylene films or by utilizing different organic materials like divinyltetramethyldisiloxane-bis(benzocyclo-butene) (BCB), low density polyethylene (PE) or adenine in combination with aluminum oxide (AlOx) to form a bilayer gate dielectric, it was possible to significantly increase the capacitance per unit area (up to two orders of magnitude). The assembly of metal-oxide and organic passivation layer combines the properties of the high dielectric constant of the metal oxide and the good organic–organic interface between semiconductor and insulator provided by a thin capping layer on top of the AlOx film. This results in OFETs that operate with voltages lower than 500 mV, while exhibiting field effect mobilities exceeding 3 cm2 V−1 s−1.
Keyword OFET
C-60
High mobility
Dielectric
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Non-UQ

Document type: Journal Article
Sub-type: Article (original research)
Collection: School of Mathematics and Physics
 
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