Electrical response of highly ordered organic thin film metal-insulator-semiconductor devices

Ullah, Mujeeb, Taylor, D. M., Schwoediauer, R., Sitter, H., Bauer, S., Sariciftci, N. S. and Singh, Th. B. (2009) Electrical response of highly ordered organic thin film metal-insulator-semiconductor devices. Journal of Applied Physics, 106 11: . doi:10.1063/1.3267045

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Author Ullah, Mujeeb
Taylor, D. M.
Schwoediauer, R.
Sitter, H.
Bauer, S.
Sariciftci, N. S.
Singh, Th. B.
Title Electrical response of highly ordered organic thin film metal-insulator-semiconductor devices
Journal name Journal of Applied Physics   Check publisher's open access policy
ISSN 0021-8979
Publication date 2009-12-10
Sub-type Article (original research)
DOI 10.1063/1.3267045
Open Access Status File (Publisher version)
Volume 106
Issue 11
Total pages 6
Place of publication College Park, MD, United States
Publisher American Institute of Physics
Language eng
Formatted abstract
We report a detailed investigation of the electrical properties of organic field-effect transistors (OFETs) and metal-insulator-semiconductor (MIS) capacitors formed from highly ordered thin films of C60 as the active semiconductor and divinyltetramethyl disiloxane-bis(benzocyclobutene) (BCB) as the gate dielectric. Current-voltage measurements show the OFETs to be n-channel devices characterized by a high electron mobility ( ~ 6 cm2/V s). An equivalent circuit model is developed which describes well both the frequency and voltage dependences of the small-signal admittance data obtained from the corresponding MIS capacitors. By fitting the circuit response to experimental data, we deduce that increasing gate voltages increases the injection of extrinsic charge carriers (electrons) into the C60. Simultaneously, the insulation resistance of the BCB decreases, presumably by electron injection into the insulator. Furthermore, the admittance spectra suggest that the capacitance-voltage (C-V) behavior originates from a parasitic, lateral conduction effect occurring at the perimeter of the capacitor, rather than from the formation of a conventional depletion region.
Keyword Charge injection
Electron mobility
Field effect transistors
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Non-UQ
Additional Notes Article # 114505

Document type: Journal Article
Sub-type: Article (original research)
Collection: School of Mathematics and Physics
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Citation counts: TR Web of Science Citation Count  Cited 20 times in Thomson Reuters Web of Science Article | Citations
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