Meyer-Neldel rule in fullerene field-effect transistors

Ullah, Mujeeb, Singh, T. B., Sitter, H. and Sariciftci, N. S. (2009) Meyer-Neldel rule in fullerene field-effect transistors. Applied Physics A: Materials Science and Processing, 97 3: 521-526. doi:10.1007/s00339-009-5397-6


Author Ullah, Mujeeb
Singh, T. B.
Sitter, H.
Sariciftci, N. S.
Title Meyer-Neldel rule in fullerene field-effect transistors
Journal name Applied Physics A: Materials Science and Processing   Check publisher's open access policy
ISSN 0947-8396
1432-0630
Publication date 2009-11
Sub-type Article (original research)
DOI 10.1007/s00339-009-5397-6
Volume 97
Issue 3
Start page 521
End page 526
Total pages 6
Place of publication Heidelberg, Germany
Publisher Springer
Language eng
Formatted abstract
The temperature dependence of the field-effect mobility is investigated in vacuum evaporated C60-based organic field-effect transistors. The results show a thermally activated behavior with an activation energy that depends on the field-induced charge carrier density in the transistor channel. Upon extrapolation of the data in an Arrhenius plot we find an empirical relation, termed theMeyer–Neldel rule, which states that the mobility prefactor increases exponentially with the activation energy. Based on this analysis a characteristic temperature is extracted. The possible implications of this observation in terms of charge transport in fullerene-based field-effect transistors are discussed.
Keyword Thin film transistors
Low temperature transport
Contact resistance
Charge transport
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Non-UQ

Document type: Journal Article
Sub-type: Article (original research)
Collection: School of Mathematics and Physics
 
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