Temperature dependence of the charge transport in a C60 based organic field effect transistor

Ullah, Mujeeb, Singh, Th. B., Matt, G. J., Simbruner, C., Hernandz-Sosa, G., Sariciftci, S. N. and Sitter, H. (2009). Temperature dependence of the charge transport in a C60 based organic field effect transistor. In: Katharina Al-Shamery, Giles Horowitz, Helmut Sitter and Horst-Günter Rubahn, Interface Controlled Organic Thin Films. Spring Meeting of the European-Materials-Research-Society, Strasbourg, France, (173-177). 8-12 June 2009. doi:10.1007/978-3-540-95930-4_28


Author Ullah, Mujeeb
Singh, Th. B.
Matt, G. J.
Simbruner, C.
Hernandz-Sosa, G.
Sariciftci, S. N.
Sitter, H.
Title of paper Temperature dependence of the charge transport in a C60 based organic field effect transistor
Formatted title
Temperature dependence of the charge transport in a C60 based organic field effect transistor
Conference name Spring Meeting of the European-Materials-Research-Society
Conference location Strasbourg, France
Conference dates 8-12 June 2009
Proceedings title Interface Controlled Organic Thin Films   Check publisher's open access policy
Journal name Springer Proceedings in Physics   Check publisher's open access policy
Place of Publication New York, United States
Publisher Springer
Publication Year 2009
Sub-type Fully published paper
DOI 10.1007/978-3-540-95930-4_28
ISBN 9783540959304
9783540959298
ISSN 0930-8989
Editor Katharina Al-Shamery
Giles Horowitz
Helmut Sitter
Horst-Günter Rubahn
Volume 129
Start page 173
End page 177
Total pages 5
Language eng
Formatted Abstract/Summary
We studied the temperature dependence of the electron transport in C60 based Organic Field Effect Transistors (OFETs). On the spin-coated bottom gate dielectric, the semi-conducting C60 thin-film has been grown by standard evaporation technique. Device
parameters as the threshold voltage, the field effect mobility and the activation energy of the electron transport were determined in the temperature range from 300 K to 77 K. The field effect mobility obeys the Meyer-Neldel Rule (MNR), which is an empirical relation
between activation energy and the mobility prefactor.
Keyword Meyer-Neldel Rule
Effect Mobility
Semiconductors
Q-Index Code E1
Q-Index Status Provisional Code
Institutional Status Non-UQ

Document type: Conference Paper
Collection: School of Chemistry and Molecular Biosciences
 
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