Defect-free < 110 > zinc-blende structured InAs nanowires catalyzed by palladium

Xu, Hongyi, Wang, Yong, Guo, Yanan, Liao, Zhiming, Gao, Qiang, Tan, H. Hoe, Jagadish, Chennupati and Zou, Jin (2012) Defect-free < 110 > zinc-blende structured InAs nanowires catalyzed by palladium. Nano Letters, 12 11: 5744-5749. doi:10.1021/nl303028u


Author Xu, Hongyi
Wang, Yong
Guo, Yanan
Liao, Zhiming
Gao, Qiang
Tan, H. Hoe
Jagadish, Chennupati
Zou, Jin
Title Defect-free < 110 > zinc-blende structured InAs nanowires catalyzed by palladium
Journal name Nano Letters   Check publisher's open access policy
ISSN 1530-6984
1530-6992
Publication date 2012-10
Sub-type Article (original research)
DOI 10.1021/nl303028u
Volume 12
Issue 11
Start page 5744
End page 5749
Total pages 6
Place of publication Washington, DC United States
Publisher American Chemical Society
Collection year 2013
Language eng
Formatted abstract
We report the epitaxial growth of defect-free zinc-blende structured InAs nanowires on GaAs{111}B substrates using palladium catalysts in a metal-organic chemical vapor deposition reactor. Through detailed morphological, structural, and chemical characterizations using electron microscopy, it is found that these defect-free InAs nanowires grew along the 〈1̄1̄ 0〉 directions with four low-energy {111} faceted side walls and {1̄1̄3̄} nanowire/catalyst interfaces. It is anticipated that these defect-free 〈1̄1̄0〉 nanowires benefit from the fact that the nanowire/catalyst interfaces does not contain the {111} planes, and the nanowire growth direction is not along the 〈111〉 directions. This study provides an effective approach to control the crystal structure and quality of epitaxial III-V nanowires.
Keyword Epitaxial growth
Defect free
InAs nanowires
MOCVD
Pd catalysts
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

 
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