Precursor flow rate manipulation for the controlled fabrication of twin-free GaAs nanowires on silicon substrates

Kang, J. H., Gao, Q., Parkinson, P., Joyce, H. J., Tan, H. H., Kim, Y., Guo, Y., Xu, H., Zou, J. and Jagadish, C. (2012) Precursor flow rate manipulation for the controlled fabrication of twin-free GaAs nanowires on silicon substrates. Nanotechnology, 23 41: 415702.1-415702.11. doi:10.1088/0957-4484/23/41/415702


Author Kang, J. H.
Gao, Q.
Parkinson, P.
Joyce, H. J.
Tan, H. H.
Kim, Y.
Guo, Y.
Xu, H.
Zou, J.
Jagadish, C.
Title Precursor flow rate manipulation for the controlled fabrication of twin-free GaAs nanowires on silicon substrates
Journal name Nanotechnology   Check publisher's open access policy
ISSN 0957-4484
1361-6528
Publication date 2012-10
Sub-type Article (original research)
DOI 10.1088/0957-4484/23/41/415702
Volume 23
Issue 41
Start page 415702.1
End page 415702.11
Total pages 11
Place of publication Bristol, United Kingdom
Publisher Institute of Physics Publishing
Collection year 2013
Language eng
Formatted abstract
Vertically oriented GaAs nanowires (NWs) are grown on Si(111) substrates using metal-organic chemical vapor deposition. Controlled epitaxial growth along the 111 direction is demonstrated following the deposition of thin GaAs buffer layers and the elimination of structural defects, such as twin defects and stacking faults, is found for high growth rates. By systematically manipulating the AsH 3 (group-V) and TMGa (group-III) precursor flow rates, it is found that the TMGa flow rate has the most significant effect on the nanowire quality. After capping the minimal tapering and twin-free GaAs NWs with an AlGaAs shell, long exciton lifetimes (over 700ps) are obtained for high TMGa flow rate samples. It is observed that the Ga adatom concentration significantly affects the growth of GaAs NWs, with a high concentration and rapid growth leading to desirable characteristics for optoelectronic nanowire device applications including improved morphology, crystal structure and optical performance.
Keyword Nanowires
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ
Additional Notes Article number 415702

 
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