Electron-beam induced freezing of an aromatic based EUV resist: a robust template for directed self assembly of block copolymers

Cheng, Han-Hao, Yu, Anguang, Keen, Imelda, Chuang, Yami, Jack, Kevin S., Leeson, Michael J., Younkin, Todd R., Blakey, Idriss and Whittaker, Andrew K. (2012) Electron-beam induced freezing of an aromatic based EUV resist: a robust template for directed self assembly of block copolymers. IEEE Transactions on Nanotechnology, 11 6: 1140-1147.


Author Cheng, Han-Hao
Yu, Anguang
Keen, Imelda
Chuang, Yami
Jack, Kevin S.
Leeson, Michael J.
Younkin, Todd R.
Blakey, Idriss
Whittaker, Andrew K.
Title Electron-beam induced freezing of an aromatic based EUV resist: a robust template for directed self assembly of block copolymers
Journal name IEEE Transactions on Nanotechnology  (ERA 2012 Listed)    (ERA 2010 Rank A)   Check publisher's open access policy
Publication date 2012-08
Sub-type Article
DOI 10.1109/TNANO.2012.2216544
Volume number 11
Issue number 6
ISSN 1536-125X; 1941-0085
Start page 1140
End page 1147
Total pages 8
Place of publication Piscataway, NJ, United States
Publisher Institute of Electrical and Electronics Engineers
Collection year 2013
Language eng
Abstract Resist freezing is routinely used in lithography applications to facilitate double patterning and the directed self assembly (DSA) of block copolymers. Previous reports of graphoepitaxy within patterned positive-tone resists used chemical freezing agents which are known to cause significant shrinkage of critical dimensions (CD). We report the 'freezing' of an aromatic-based EUV resist by exposure to an electron beam, so did not require the use of chemical agents. Crucially, the process did not lead to significant changes in CD and line edge roughness (LER), where the frozen patterns were resistant to treatment with solvents and annealing to temperatures well above the glass transition temperature of the uncrosslinked resist. Finally, we take advantage of these properties and demonstrate the utility of this process for applications in the directed self assembly of block copolymers leading to pattern multiplication.
Keyword Directed self assembly
Resist freezing
Electron beam lithography
EUVL
Aromatic resist photoresist
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

 
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Created: Fri, 02 Nov 2012, 12:14:41 EST by Sandrine Ducrot on behalf of Centre for Advanced Imaging