Aqueous developable dual switching photoresists for nanolithography

Chen, Lan, Goh, Yong Keng, Cheng, Han Hao, Smith, Bruce W., Xie, Peng, Montgomery, Warren, Whittaker, Andrew K. and Blakey, Idriss (2012) Aqueous developable dual switching photoresists for nanolithography. Journal of Polymer Science Part A: Polymer Chemistry, 50 20: 4255-4265.


Author Chen, Lan
Goh, Yong Keng
Cheng, Han Hao
Smith, Bruce W.
Xie, Peng
Montgomery, Warren
Whittaker, Andrew K.
Blakey, Idriss
Title Aqueous developable dual switching photoresists for nanolithography
Journal name Journal of Polymer Science Part A: Polymer Chemistry   Check publisher's open access policy
ISSN 0887-624X
1099-0518
Publication date 2012-10-15
Sub-type Article (original research)
DOI 10.1002/pola.26232
Volume 50
Issue 20
Start page 4255
End page 4265
Total pages 11
Place of publication Hoboken, NJ, United States
Publisher John Wiley & Sons
Collection year 2013
Language eng
Abstract Photon-mediated switching of polymer solubility plays a crucial role in the manufacture of integrated circuits by photolithography. Conventional photoresists typically rely on a single switching mechanism based on either a change in polarity or, molecular weight of the polymer. Here we report a photoresist platform that uses both mechanisms. The molecular weight switch was achieved by using a poly(olefin sulfone) designed to undergo photo-induced chain scission. The polarity switch was achieved using pendant groups functionalized with o-nitrobenzyl esters. These are hydrophobic photosensitive-protecting groups for hydrophilic carboxylic acids. On irradiation, they are cleaved, making the polymer soluble in aqueous base. Importantly, the resists do not contain photoacid generator, so do not suffer from problems associated with acid diffusion that are detrimental to pattern fidelity. The 193 nm photochemistry of polymer thin films was followed using grazing angle attenuated total reflectance Fourier transform infrared spectroscopy, variable angle spectroscopic ellipsometry, and measurements of solubility in aqueous base. The nanoscale patterning performance of the polymers was also assessed using 193 nm interference lithography and electron-beam lithography. The implications of using dual switching mechanisms are discussed.
Keyword Copolymerization
Imaging
Photochemistry
Photoreactive effects
Photoresists
Structure–property relations
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

 
Versions
Version Filter Type
Citation counts: TR Web of Science Citation Count  Cited 4 times in Thomson Reuters Web of Science Article | Citations
Scopus Citation Count Cited 4 times in Scopus Article | Citations
Google Scholar Search Google Scholar
Access Statistics: 66 Abstract Views  -  Detailed Statistics
Created: Fri, 02 Nov 2012, 12:05:39 EST by Sandrine Ducrot on behalf of Centre for Advanced Imaging