Behavior of Au-Si droplets in Si(001) at high temperatures

Shao, Y. M., Nie, T. X., Jiang, Z. M. and Zou, J. (2012) Behavior of Au-Si droplets in Si(001) at high temperatures. Applied Physics Letters, 101 5: 053104.1-053104.3. doi:10.1063/1.4739413

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Author Shao, Y. M.
Nie, T. X.
Jiang, Z. M.
Zou, J.
Title Behavior of Au-Si droplets in Si(001) at high temperatures
Journal name Applied Physics Letters   Check publisher's open access policy
ISSN 0003-6951
Publication date 2012-07-30
Sub-type Article (original research)
DOI 10.1063/1.4739413
Open Access Status File (Publisher version)
Volume 101
Issue 5
Start page 053104.1
End page 053104.3
Total pages 3
Place of publication College Park, MD, United States
Publisher American Institute of Physics
Collection year 2013
Language eng
Formatted abstract
The transport behavior of Au-Si droplets near the Si(001) surface at elevated temperatures is investigated using transmission electron microscopy. It has been found that Au-Si droplets move differently under different temperatures, which lead to the formation of SiOx surface islands on top of droplets, and result in the lateral movements of smaller droplets away from their corresponding surface islands. Since Au droplets have been widely used as catalysts to induce semiconductor nanowires, this study provides insight behavior of Au containing droplets on semiconductor surfaces, which is critical for understanding the formation mechanisms of semiconductor nanowires.
Keyword Silicon
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ
Additional Notes Article #053104 Published online 30 July 2012

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Created: Fri, 12 Oct 2012, 18:37:04 EST by System User on behalf of Centre for Microscopy and Microanalysis