SOS junctionless MOSFETs vs. inversion channel MOSFETs: Doubling the device speed without changing the technology

Bertling, K., Rakic, A. D., Yeow, Y. T., O'Brien, C. J. and Domyo, H. (2012) SOS junctionless MOSFETs vs. inversion channel MOSFETs: Doubling the device speed without changing the technology. Microwave and Optical Technology Letters, 54 12: 2755-2757. doi:10.1002/mop.27163


Author Bertling, K.
Rakic, A. D.
Yeow, Y. T.
O'Brien, C. J.
Domyo, H.
Title SOS junctionless MOSFETs vs. inversion channel MOSFETs: Doubling the device speed without changing the technology
Journal name Microwave and Optical Technology Letters   Check publisher's open access policy
ISSN 0895-2477
1098-2760
Publication date 2012-12
Sub-type Article (original research)
DOI 10.1002/mop.27163
Volume 54
Issue 12
Start page 2755
End page 2757
Total pages 3
Place of publication Hoboken, NJ, United States
Publisher John Wiley & Sons
Collection year 2013
Language eng
Formatted abstract
This letter compares experimentally the performance of the SOS junctionless MOSFET and the conventional SOS inversion-channel MOSFET, fabricated in a production line technology. It was shown that the former has a significantly higher cutoff frequency fT, and therefore presents a viable alternative to a conventional SOS MOSFETs for high-speed integrated circuits.
Keyword SOS technology
Junctionless transistor
Junctionless MOSFET
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

Document type: Journal Article
Sub-type: Article (original research)
Collections: Official 2013 Collection
School of Information Technology and Electrical Engineering Publications
 
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Created: Tue, 09 Oct 2012, 14:45:40 EST by Karl Bertling on behalf of School of Information Technol and Elec Engineering