Incubational domain characterization in lightly doped ceria

Li, Zhi-Peng, Mori, Toshiyuki, Auchterlonie, Graeme John, Zou, Jin and Drennan, John (2012) Incubational domain characterization in lightly doped ceria. Journal of Solid State Chemistry, 192 28-33. doi:10.1016/j.jssc.2012.03.051

Author Li, Zhi-Peng
Mori, Toshiyuki
Auchterlonie, Graeme John
Zou, Jin
Drennan, John
Title Incubational domain characterization in lightly doped ceria
Journal name Journal of Solid State Chemistry   Check publisher's open access policy
ISSN 0022-4596
Publication date 2012-08
Sub-type Article (original research)
DOI 10.1016/j.jssc.2012.03.051
Open Access Status
Volume 192
Start page 28
End page 33
Total pages 6
Place of publication Maryland Heights, MO, United States
Publisher Academic Press
Collection year 2013
Language eng
Abstract Microstructures of both Gd- and Y-dopedceria with different doping level (i.e., 10 at% and 25 at%) have been comprehensively characterized by means of high resolution transmission electron microscopy and selected area electron diffraction. Coherent nano-sized domains can be widely observed in heavily dopedceria. Nevertheless, it was found that a large amount of dislocations actually exist in lightlydopedceria instead of heavily doped ones. Furthermore, incubationaldomains can be detected in lightlydopedceria, with dislocations located at the interfaces. The interactions between such linear dislocations and dopant defects have been simulated accordingly. As a consequence, the formation mechanism of incubationaldomains is rationalized in terms of the interaction between intrinsic dislocations of dopedceria and dopant defects. This study offers the insights into the initial state and related mechanism of the formation of nano-sized domains, which have been widely observed in heavily rare-earth-dopedceria in recent years.
Keyword Atomistic simulation
Doped ceria
Electron microscopy
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

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