Structured-gate organic field-effect transistors

Aljada, Muhsen, Pandey, Ajay K., Velusamy, Marappan, Burn, Paul L., Meredith, Paul and Namdas, Ebinazar B. (2012) Structured-gate organic field-effect transistors. Journal of Physics D: Applied Physics, 45 22: . doi:10.1088/0022-3727/45/22/225105

Author Aljada, Muhsen
Pandey, Ajay K.
Velusamy, Marappan
Burn, Paul L.
Meredith, Paul
Namdas, Ebinazar B.
Title Structured-gate organic field-effect transistors
Journal name Journal of Physics D: Applied Physics   Check publisher's open access policy
ISSN 0022-3727
Publication date 2012-06-06
Sub-type Article (original research)
DOI 10.1088/0022-3727/45/22/225105
Volume 45
Issue 22
Total pages 7
Place of publication Bristol, United Kingdom
Publisher Institute of Physics Publishing
Collection year 2013
Language eng
Formatted abstract
We report the fabrication and electrical characteristics of structured-gate organic field-effect transistors consisting of a gate electrode patterned with three-dimensional pillars. The pillar gate electrode was over-coated with a gate dielectric (SiO2) and solution processed organic semiconductors producing both unipolar p-type and bipolar behaviour. We show that this new structured-gate architecture delivers higher source–drain currents, higher gate capacitance per unit equivalent linear channel area, and enhanced charge injection (electrons and/or holes) versus the conventional planar structure in all modes of operation. For the bipolar field-effect transistor (FET) the maximum source–drain current enhancements in p- and n-channel mode were >600% and 28%, respectively, leading to p and n charge mobilities with the same order of magnitude. Thus, we have demonstrated that it is possible to use the FET architecture to manipulate and match carrier mobilities of material combinations where one charge carrier is normally dominant. Mobility matching is advantageous for creating organic logic circuit elements such as inverters and amplifiers. Hence, the method represents a facile and generic strategy for improving the performance of standard organic semiconductors as well as new materials and blends.
Keyword Thin film transistor
Solar cells
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

Document type: Journal Article
Sub-type: Article (original research)
Collections: School of Mathematics and Physics
Official 2013 Collection
School of Chemistry and Molecular Biosciences
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Citation counts: TR Web of Science Citation Count  Cited 4 times in Thomson Reuters Web of Science Article | Citations
Scopus Citation Count Cited 3 times in Scopus Article | Citations
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