Lattice bending in monocrystalline GaAs induced by nanoscratching

Wu, Y. Q., Huang, H. and Zou, J. (2012) Lattice bending in monocrystalline GaAs induced by nanoscratching. Materials Letters, 80 187-190. doi:10.1016/j.matlet.2012.04.057


Author Wu, Y. Q.
Huang, H.
Zou, J.
Title Lattice bending in monocrystalline GaAs induced by nanoscratching
Journal name Materials Letters   Check publisher's open access policy
ISSN 0167-577X
1873-4979
Publication date 2012-08-01
Sub-type Article (original research)
DOI 10.1016/j.matlet.2012.04.057
Volume 80
Start page 187
End page 190
Total pages 4
Place of publication Amsterdam, Netherlands
Publisher Elsevier
Collection year 2013
Language eng
Abstract Deformation behaviors of monocrystalline GaAs induced by nanoscratching were investigated by means of cross-sectional transmission electron microscopy. Lattice bending was observed for the first time at atomic scale in semiconductor materials. The mechanism of lattice bending was discussed.
Keyword GaAs
Semiconductors
Nanoscratch
Deformation
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

 
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Created: Sat, 02 Jun 2012, 20:47:47 EST by Professor Han Huang on behalf of School of Mechanical and Mining Engineering