Formation of coupled three-dimensional GeSi quantum dot crystals

Ma, Y. J., Zhong, Z., Lv, Q., Zhou, T., Yang, X. J., Fan, Y. L., Wu, Y. Q., Zou, J. and Jiang, Z. M. (2012) Formation of coupled three-dimensional GeSi quantum dot crystals. Applied Physics Letters, 100 15: 153113.1-153113.4. doi:10.1063/1.3702883

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Author Ma, Y. J.
Zhong, Z.
Lv, Q.
Zhou, T.
Yang, X. J.
Fan, Y. L.
Wu, Y. Q.
Zou, J.
Jiang, Z. M.
Title Formation of coupled three-dimensional GeSi quantum dot crystals
Journal name Applied Physics Letters   Check publisher's open access policy
ISSN 0003-6951
1077-3118
Publication date 2012-04
Sub-type Article (original research)
DOI 10.1063/1.3702883
Open Access Status File (Publisher version)
Volume 100
Issue 15
Start page 153113.1
End page 153113.4
Total pages 4
Place of publication College Park, MD, United States
Publisher American Institute of Physics
Collection year 2013
Language eng
Abstract Coupled three-dimensional GeSi quantum dot crystals (QDCs) are realized by multilayer growth of quantum dots (QDs) on patterned SOI (001) substrates. Photoluminescence spectra of these QDCs show non-phonon (NP) recombination and its transverse-optical (TO) phonon replica of excitons in QDs. With increasing excitation power, peak energies of both the NP and TO peaks remain nearly constant and the width of the TO peak decreases. These anomalous features of the PL peaks are attributed to miniband formation due to strong coupling of the holes and the emergence of quasioptical phonon modes due to periodic scatters in ordered GeSi QDs.
Keyword Photoluminescence
Islands
Superlattices
Si(001)
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ
Additional Notes Article number 153113

 
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