High-density, defect-free, and taper-restrained epitaxial GaAs nanowires induced from annealed Au thin films

Xu, Hongyi, Wang, Yong, Guo, Yanan, Liao, Zhiming, Gao, Qiang, Jiang, Nian, Tan, Hoe H., Jagadish, Chennupati and Zou, Jin (2012) High-density, defect-free, and taper-restrained epitaxial GaAs nanowires induced from annealed Au thin films. Crystal Growth and Design, 12 4: 2018-2022. doi:10.1021/cg201725g


Author Xu, Hongyi
Wang, Yong
Guo, Yanan
Liao, Zhiming
Gao, Qiang
Jiang, Nian
Tan, Hoe H.
Jagadish, Chennupati
Zou, Jin
Title High-density, defect-free, and taper-restrained epitaxial GaAs nanowires induced from annealed Au thin films
Journal name Crystal Growth and Design   Check publisher's open access policy
ISSN 1528-7483
1528-7505
Publication date 2012-04
Sub-type Article (original research)
DOI 10.1021/cg201725g
Volume 12
Issue 4
Start page 2018
End page 2022
Total pages 5
Place of publication Washington, DC, United States
Publisher American Chemical Society
Collection year 2013
Language eng
Abstract In this study, we demonstrated that by using annealed Au thin films as catalysts, high-density, defect-free, and taper-restrained epitaxial GaAs nanowires were grown on GaAs (111)B substrates. The as-grown nanowires were compared with low-density Au colloidal nanoparticle catalyzed GaAs nanowires grown under identical conditions in the same metal–organic chemical vapor deposition reactor. Through detailed morphological and structural characterizations using advanced electron microscopy, we discovered that GaAs epitaxial nanowire tapering can be efficiently restrained by increasing the density of Au catalysts. By increasing the density of the Au catalysts, the axial growth rate of nanowires is reduced, which, in turn, limits the formation of lattice defects. Furthermore, the comprehensive investigation of GaAs nanowires catalyzed by Au thin film of different thicknesses (1 nm, 2 nm, 3 nm, and 5 nm) and Au colloidal particles of different densities indicates that the density of the Au catalysts play an important role in GaAs nanowire growth. This comprehensive study provides an opportunity to explore the effects of the catalysts and the growth mechanisms of III–V epitaxial semiconductor nanowires.
Keyword III-V nanowires
Semiconductor nanowires
Growth
Mechanism
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

 
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