Meyer–Neldel rule for charge carrier transport in fullerene devices: A comparative study

Pivrikas, A., Ullah, Mujeeb, Singh, Th. B., Simbrunner, C., Matt, G., Sitter, H. and Sariciftci, N. S. (2011) Meyer–Neldel rule for charge carrier transport in fullerene devices: A comparative study. Organic Electronics, 12 1: 161-168. doi:10.1016/j.orgel.2010.10.014

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Author Pivrikas, A.
Ullah, Mujeeb
Singh, Th. B.
Simbrunner, C.
Matt, G.
Sitter, H.
Sariciftci, N. S.
Title Meyer–Neldel rule for charge carrier transport in fullerene devices: A comparative study
Journal name Organic Electronics   Check publisher's open access policy
ISSN 1566-1199
1878-5530
Publication date 2011-01
Year available 2010
Sub-type Article (original research)
DOI 10.1016/j.orgel.2010.10.014
Open Access Status
Volume 12
Issue 1
Start page 161
End page 168
Total pages 8
Place of publication Amsterdam, Netherlands
Publisher Elsevier
Collection year 2012
Language eng
Formatted abstract
Charge transport is comparatively studied in the bulk and at the interface of disordered fullerene films fabricated using physical vapour deposition. Charge carrier concentration and temperature dependent electron mobilities are comparatively studied using charge extraction by linearly increasing voltage (CELIV) technique and organic field-effect transistors (OFET) measurements. Electron mobility is at least two orders of magnitude higher than hole mobility in the fullerene films. Lower mobility values and stronger concentration dependence in diodes is observed. Carrier concentration dependent activation energy is experimentally measured in both types of devices. Larger activation energy for electron transport is required at lower carrier concentrations. Meyer–Neldel rule (MNR) for electron mobility is observed in both the bulk of the fullerene films and in the transistor channel at the interface. Meyer–Neldel energy (EMN = 35 meV), which is interpreted as disorder parameter, is the same in both device geometries, which suggest that the level of disorder and energetical landscape for charge transport is similar in the bulk of fullerene films and at the interface with the insulator. Disorder formalism is used to qualitatively explain that either carrier concentration or the nature of non-equilibrium charge carrier transport in CELIV compared to steady-state OFET measurements is responsible for observed transport properties.
Keyword Meyer–Neldel rule
Arrhenius
CELIV
OFET
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Non-UQ
Additional Notes Available online 12 November 2010

Document type: Journal Article
Sub-type: Article (original research)
Collections: School of Mathematics and Physics
Non HERDC
School of Chemistry and Molecular Biosciences
 
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Created: Mon, 19 Mar 2012, 15:41:36 EST by Almantas Pivrikas on behalf of School of Chemistry & Molecular Biosciences