Comparative study of bulk and interface transport in disordered fullerene films

Pivrikas, Almantas, Ullah, Mujeeb, Simbrunner, Clemens, Sitter, Helmut, Neugebauer, Helmut and Sariciftci, N. Serdar (2011). Comparative study of bulk and interface transport in disordered fullerene films. In: Proceedings: International Winterschool on Electronic Properties of Novel Materials (IWEPNM). 25th IWEPNM 2011, Kirchberg, Austria, (2656-2659). 26 February - 5 March 2011. doi:10.1002/pssb.201100061


Author Pivrikas, Almantas
Ullah, Mujeeb
Simbrunner, Clemens
Sitter, Helmut
Neugebauer, Helmut
Sariciftci, N. Serdar
Title of paper Comparative study of bulk and interface transport in disordered fullerene films
Conference name 25th IWEPNM 2011
Conference location Kirchberg, Austria
Conference dates 26 February - 5 March 2011
Proceedings title Proceedings: International Winterschool on Electronic Properties of Novel Materials (IWEPNM)   Check publisher's open access policy
Journal name Physica Status Solidi B: Basic Research   Check publisher's open access policy
Place of Publication Weinheim, Germany
Publisher Wiley
Publication Year 2011
Sub-type Fully published paper
DOI 10.1002/pssb.201100061
Open Access Status
ISSN 0370-1972
1521-3951
Volume 248
Issue 11
Start page 2656
End page 2659
Total pages 4
Collection year 2012
Language eng
Abstract/Summary The characterization of the charge carrier transport in disordered fullerene films, grown by physical vapor deposition, is important for organic electronics in order to improve carrier mobility and understand transport processes. In this contribution, the electron mobility in the bulk of the fullerene film and at the interface with dielectrics are compared. The bulk mobility is measured in diode structures using the Charge Extraction by Linearly Increasing Voltage (CELIV) technique, which allows a simultaneous study of the electric field, concentration and temperature dependence. The interface mobility is determined using organic field effect transistor (OFET) geometry. The electron mobility values are lower and the dependence on carrier density, field and temperature is stronger in diodes compared to OFETs. In both structures different temperature dependence of the mobility on the carrier concentration and on the electric field is obtained. The dependence shows Meyer-Neldel rule (MN-rule) behavior with similar MN temperatures and MN energies. Activation energy for electron transport plotted as a function of the square root of electric field is linear (Gill's law behavior), in accordance with Poole-Frenkel-type charge carrier transport.
Keyword Charge extraction
Charge transport
Field-effect transistors
Fullerenes
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ
Additional Notes Published online: 6 September 2011.

Document type: Conference Paper
Collections: Official 2012 Collection
School of Chemistry and Molecular Biosciences
 
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Created: Mon, 19 Mar 2012, 11:49:13 EST by Almantas Pivrikas on behalf of School of Chemistry & Molecular Biosciences