A study on the diamond grinding of ultra-thin silicon wafers

Zhou, L., Tian, Y. B., Huang, H., Sato, H. and Shimizu, J. (2012) A study on the diamond grinding of ultra-thin silicon wafers. Proceedings of the Institution of Mechanical Engineers Part B: Journal of Engineering Manufacture, 226 1: 66-75.


Author Zhou, L.
Tian, Y. B.
Huang, H.
Sato, H.
Shimizu, J.
Title A study on the diamond grinding of ultra-thin silicon wafers
Journal name Proceedings of the Institution of Mechanical Engineers Part B: Journal of Engineering Manufacture   Check publisher's open access policy
ISSN 0954-4054
2041-2975
Publication date 2012-01
Year available 2011
Sub-type Article (original research)
DOI 10.1177/0954405411414768
Volume 226
Issue 1
Start page 66
End page 75
Total pages 10
Place of publication London, United Kingdom
Publisher Sage Publications
Collection year 2012
Language eng
Abstract The demand for ultra-thin silicon wafers has escalated in recent years with the rapid development of miniaturized electronic devices. In this work, diamond grinding for thinning silicon wafers was carried out on an ultra-precision grinding machine. The thinning performance and the minimum wafer thickness were investigated under different grinding conditions. It was found that the grain depth of cut that was used to characterize the overall grinding conditions played an important role in the determination of the final grinding performance. The relationship between the subsurface damage of the ground wafer and the minimum wafer thickness achieved was also revealed.
Keyword Silicon wafer
Thinning process
Grain depth of cut
Subsurface damage
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ
Additional Notes Published online before print August 8, 2011

Document type: Journal Article
Sub-type: Article (original research)
Collections: School of Mechanical & Mining Engineering Publications
Official 2012 Collection
 
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