Comparison of SOS MOSFET's equivalent circuit parameters extracted from LCR meter and VNA measurement

Bertling, Karl, Rakic, Aleksandar D., Yeow, Yew Tong, Brawley, Andrew, Domyo, Hiroshi and Rotella, Francis M. (2012) Comparison of SOS MOSFET's equivalent circuit parameters extracted from LCR meter and VNA measurement. IEEE Transactions on Electron Devices, 59 1: 20-25. doi:10.1109/TED.2011.2170426


Author Bertling, Karl
Rakic, Aleksandar D.
Yeow, Yew Tong
Brawley, Andrew
Domyo, Hiroshi
Rotella, Francis M.
Title Comparison of SOS MOSFET's equivalent circuit parameters extracted from LCR meter and VNA measurement
Journal name IEEE Transactions on Electron Devices   Check publisher's open access policy
ISSN 0018-9383
1557-9646
Publication date 2012-01
Year available 2011
Sub-type Article (original research)
DOI 10.1109/TED.2011.2170426
Volume 59
Issue 1
Start page 20
End page 25
Total pages 6
Place of publication Piscataway, NJ, United States
Publisher IEEE
Collection year 2012
Language eng
Abstract In this paper, we critically compare two techniques for the parametrization of silicon-on-sapphire MOSFETs' high-frequency small-signal equivalent circuit and discuss the scalability of high-frequency equivalent circuit parameters. We demonstrate that the same values of the high-frequency circuit elements are obtained from both the vector network analyzer and the low-frequency LCR measurements. We show that this holds even when majority carriers in the isolated body of the transistor are not in the equilibrium state, implying that the equivalence does not depend on quasi-static response of the carriers.
Keyword Modeling
MOSFET
Parameter estimation
Parameter extraction
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ
Additional Notes Date of publication November 3, 2011 (online)

Document type: Journal Article
Sub-type: Article (original research)
Collections: Official 2012 Collection
School of Information Technology and Electrical Engineering Publications
 
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Created: Fri, 03 Feb 2012, 12:39:49 EST by Karl Bertling on behalf of School of Information Technol and Elec Engineering