Graphene flash memory

Hong, Augustin, Song, Emil B., Yu, Hyung Suk, Allen, Matthew J., Kim, Jiyoung, Fowler, Jesse D., Wassei, Jonathan K., Park, Youngju, Wang, Yong, Zou, Jin, Kaner, Richard B., Weiller, Bruce H. and Wang, Kang L. (2011) Graphene flash memory. ACS Nano, 5 10: 7812-7817. doi:10.1021/nn201809k


Author Hong, Augustin
Song, Emil B.
Yu, Hyung Suk
Allen, Matthew J.
Kim, Jiyoung
Fowler, Jesse D.
Wassei, Jonathan K.
Park, Youngju
Wang, Yong
Zou, Jin
Kaner, Richard B.
Weiller, Bruce H.
Wang, Kang L.
Title Graphene flash memory
Journal name ACS Nano   Check publisher's open access policy
ISSN 1936-0851
1936-086X
Publication date 2011-10
Sub-type Article (original research)
DOI 10.1021/nn201809k
Volume 5
Issue 10
Start page 7812
End page 7817
Total pages 6
Place of publication Washington, DC, United States
Publisher American Chemical Society
Collection year 2012
Language eng
Formatted abstract
Graphene's single atomic layer of sp2 carbon has recently garnered much attention for its potential use in electronic applications. Here, we report a memory application for graphene, which we call graphene flash memory (GFM). GFM has the potential to exceed the performance ofcurrent flash memory technology by utilizing the intrinsic properties of graphene, such as high density of states, high work function, and low dimensionality. To this end, we have grown large-area graphene sheets by chemical vapor deposition and integrated them into a floating gate structure. GFM displays a wide memory window of ∼6 V at significantly low program/erase voltages of (± 7 V. GFM also shows a long retention time of more than 10 years at room temperature. Additionally, simulations suggest that GFM suffers very little from cell-to-cell interference, potentially enabling scaling down far beyond current state-of-the-art flash memory devices.  
Keyword Graphene
Nonvolatile flash memory
Memory window
Retention time
Cell-to-cell interference
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

 
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