Improvement in OFF-State Leakage Current of n-Channel SOS MOSFETs by Hydrogen Annealing of the SOS Film

Domyo, Hiroshi, Imthurn, George, Ho, Tran, Miscione, Anthony M., Rakic, Aleksandar D. and Yeow, Yew-Tong (2011) Improvement in OFF-State Leakage Current of n-Channel SOS MOSFETs by Hydrogen Annealing of the SOS Film. Ieee Transactions On Electron Devices, 58 11: 3787-3792. doi:10.1109/TED.2011.2168401


Author Domyo, Hiroshi
Imthurn, George
Ho, Tran
Miscione, Anthony M.
Rakic, Aleksandar D.
Yeow, Yew-Tong
Title Improvement in OFF-State Leakage Current of n-Channel SOS MOSFETs by Hydrogen Annealing of the SOS Film
Journal name Ieee Transactions On Electron Devices   Check publisher's open access policy
ISSN 0018-9383
1557-9646
Publication date 2011-11-01
Sub-type Article (original research)
DOI 10.1109/TED.2011.2168401
Volume 58
Issue 11
Start page 3787
End page 3792
Total pages 6
Place of publication Piscataway, NJ, United States
Publisher I E E E
Collection year 2012
Language eng
Formatted abstract
The OFF-state source-to-drain leakage current and punchthrough voltage are the quantities that frequently limit the performance of short-channel floating-body silicon-on-sapphire (SOS) n-channel MOSFETs. In this paper, we demonstrate that the high-temperature hydrogen annealing of the SOS film prior to the device fabrication leads to marked improvement in these two parameters. The effect is attributed to the impact of hydrogen on the out-diffused thin alumina layer formed at the silicon–sapphire interface during the anneal. The thin alumina layer acting as a p-type dopant source at the back interface eliminates the back surface depletion of SOS  n-MOSFETs. It also acts as a recombination center to eliminate the floating-body effect
of floating-body n-MOSFETs. This technique provides a practical and reliable process to build short-channel floating-body SOS n-MOSFETs with OFF-state leakage as low as the junction leakage and punchthrough voltage as high as 6 V or higher at the gate
length of 0.5 μm without any degradation on the inversion layer carrier mobility or increase in the junction leakage current.
Keyword OFF state leakage
Punch through voltage
Sos-Cmos
Surface recombination velocity
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ
Additional Notes Manuscript received February 28, 2011; revised August 2, 2011; accepted August 2, 2011. Date of current version October 21, 2011.

Document type: Journal Article
Sub-type: Article (original research)
Collections: Official 2012 Collection
School of Information Technology and Electrical Engineering Publications
 
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