Ion-assisted deposition of mixed Tio2-Sio2 films

Netterfield, R. P., Martin, P. J., Pacey, C. G., Sainty, W. G., McKenzie, D. R. and Auchterlonie, G. (1989) Ion-assisted deposition of mixed Tio2-Sio2 films. Journal of Applied Physics, 66 4: 1805-1809. doi:10.1063/1.344352

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Author Netterfield, R. P.
Martin, P. J.
Pacey, C. G.
Sainty, W. G.
McKenzie, D. R.
Auchterlonie, G.
Title Ion-assisted deposition of mixed Tio2-Sio2 films
Formatted title
Ion-assisted deposition of mixed Tio2-Sio2 films
Journal name Journal of Applied Physics   Check publisher's open access policy
ISSN 0021-8979
Publication date 1989-08-15
Sub-type Article (original research)
DOI 10.1063/1.344352
Open Access Status File (Publisher version)
Volume 66
Issue 4
Start page 1805
End page 1809
Total pages 5
Place of publication Melville, NY, United States
Publisher A I P Publishing LLC
Language eng
Formatted abstract
Mixed thin films of TiO2 and SiO2 were produced by coevaporation from separate electron‐beam sources and simultaneous bombardment of the growingfilm with oxygen ions. The optical properties of the films were determined during growth by in situ ellipsometry and the surface composition of the depositedfilms studied by in situ ion scatteringspectroscopy, ex situ x‐ray photoelectron spectroscopy, and energy filtered electron diffraction. The correlation between the optical and surface characterization is presented. There is evidence of local variations in the relative concentrations of TiO2 and SiO2. The position of the Si 2p binding energy depends on the TiO2 content in the film, indicating the possible formation of an intimate mixture.
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
Collection: ResearcherID Downloads
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