Cr metal thin film memory

Hong, Augustin J., Kim, Jiyoung, Kim, Kyoungwhan, Wang, Yong, Xiu, Faxian, Jeon, Jaeseok, Park, Jemin, Rauda, Iris, Chen, Li-Min, Yang, Yang, Tolbert, Sarah, Zou, Jin and Wang, Kang L. (2011) Cr metal thin film memory. Journal of Applied Physics, 110 5: 054504-1-054504-5. doi:10.1063/1.3626901

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Author Hong, Augustin J.
Kim, Jiyoung
Kim, Kyoungwhan
Wang, Yong
Xiu, Faxian
Jeon, Jaeseok
Park, Jemin
Rauda, Iris
Chen, Li-Min
Yang, Yang
Tolbert, Sarah
Zou, Jin
Wang, Kang L.
Title Cr metal thin film memory
Journal name Journal of Applied Physics   Check publisher's open access policy
ISSN 0021-8979
Publication date 2011-09
Sub-type Article (original research)
DOI 10.1063/1.3626901
Open Access Status File (Publisher version)
Volume 110
Issue 5
Start page 054504-1
End page 054504-5
Total pages 5
Place of publication College Park, MD, United States
Publisher American Institute of Physics
Collection year 2012
Language eng
Abstract As state of the art flash memory technologies scale down to sub 30 nm node, conventional floating gate flash memory approaches its physical scaling limit mainly because of the high gate coupling ratio (GCR) requirement to secure proper memory window. Here, we report a novel flash memory device called Cr metal thin film memory (MTFM) that can circumvent the GCR issue and extend flash memory scalability by employing Cr thin film as a storage layer. Cr metal thin film memory devices with simple and low temperature processes produced a wide memory window of 10 V at the ±18 V voltage sweep with GCR of only 0.3. Such a large window can be adopted for multi-level cell operations, which can further increase the memory density. Also, retention measurement shows more than 10 years retention time due to higher energy barrier between Cr metal and tunnel oxide than conventional poly silicon and tunnel oxide. Cross section transmission electron microscope (TEM) images showed the structure and accurate dimensions of the Cr MTFM device with continuous Cr film and sharp interfaces. As for material characterizations, an amorphous like Cr phase was observed through TEM and x-ray diffraction (XRD). X-ray photoelectron spectroscopy (XPS) confirmed the Cr-Cr bond and Cr-O bond near the Cr surface after evaporation and rapid thermal annealing. This metal thin film memory may open a new route to achieve the terabit level flash memory.
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ
Additional Notes Special topic: Seleted papers from the Piezoresponse Force Microscopy Workshop Series

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