The influence of double-layer charge interaction on charge injection and charge decay in Si nanocrystals

Zhu, C. Y., Wu, R., Wu, Y. Q., Fan, Y. L., Jiang, Z. M. and Yang, X. J. (2007) The influence of double-layer charge interaction on charge injection and charge decay in Si nanocrystals. Nanotechnology, 18 23: . doi:10.1088/0957-4484/18/23/235403


Author Zhu, C. Y.
Wu, R.
Wu, Y. Q.
Fan, Y. L.
Jiang, Z. M.
Yang, X. J.
Title The influence of double-layer charge interaction on charge injection and charge decay in Si nanocrystals
Journal name Nanotechnology   Check publisher's open access policy
ISSN 1361-6528
0957-4484
Publication date 2007-06-13
Sub-type Article (original research)
DOI 10.1088/0957-4484/18/23/235403
Volume 18
Issue 23
Total pages 4
Place of publication Bristol, United Kingdom
Publisher Institute of Physics Publishing
Language eng
Formatted abstract
The charge injection and decaying processes along the vertical direction in single-layer and double-layer Si nanocrystals embedded in a SiO2 matrix are investigated by electrostatic force microscopy. The charges trapped in the double-layer Si nanocrystals are found to decay much more slowly than those trapped in the single-layer sample. This phenomenon indicates that the double-layer structure of a Si nanocrystal sample can retard the charge decay process remarkably. We suggest that the Coulomb repulsive interaction of the charges trapped in one Si nanocrystal layer with those trapped in another Si nanocrystal layer is responsible for the blocking of the charge decay along the vertical direction of the structure.
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Non-UQ
Additional Notes Article # 235403

Document type: Journal Article
Sub-type: Article (original research)
Collection: Faculty of Engineering, Architecture and Information Technology Publications
 
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Created: Tue, 04 Oct 2011, 10:07:29 EST by Viviane Victoria Crosthwaite on behalf of Faculty Of Engineering, Architecture & Info Tech