Shape change of SiGe islands with initial Si capping

Wu, Y. Q., Li, F. H., Cui, J., Wu, R., Qin, J., Zhu, C. Y., Fan, Y. L., Yang, X. J. and Jiang, Z. M. (2005) Shape change of SiGe islands with initial Si capping. Applied Physics Letters, 87 22: 223116-1-223116-3. doi:10.1063/1.2137307

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Author Wu, Y. Q.
Li, F. H.
Cui, J.
Wu, R.
Qin, J.
Zhu, C. Y.
Fan, Y. L.
Yang, X. J.
Jiang, Z. M.
Title Shape change of SiGe islands with initial Si capping
Journal name Applied Physics Letters   Check publisher's open access policy
ISSN 0003-6951
Publication date 2005-11-28
Sub-type Article (original research)
DOI 10.1063/1.2137307
Open Access Status File (Publisher version)
Volume 87
Issue 22
Start page 223116-1
End page 223116-3
Total pages 3
Place of publication College Park, MD, United States
Publisher American Institute of Physics
Language eng
Abstract The morphologies of self-assembled Ge/Si(001) islands with initial Si capping at a temperature of 640 °C are investigated by atomic force microscopy. Before Si capping, the islands show a metastable dome shape with very good size uniformity. This dome shape changes to a pyramid shape with {103} facets at a Si capping thickness of 0.32 nm, and then changes to pyramid shapes with {104} and {105} facets at Si capping thicknesses of 0.42 and 0.64 nm, respectively. Noteworthy is that islands with one side retained their dome shape while the other three sides that changed to {103} facets are observed at a Si capping thickness of 0.18 nm. These observations indicate that island shape change with Si capping is a kinetic rather than thermodynamic process. The atomic processes associated with this island shape change are kinetically limited at a low temperature of 400 °C, and no significant change in size and shape of islands is observed when Si capping layers are deposited at this temperature.
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Non-UQ
Additional Notes Article # 223116

Document type: Journal Article
Sub-type: Article (original research)
Collection: Faculty of Engineering, Architecture and Information Technology Publications
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Citation counts: TR Web of Science Citation Count  Cited 24 times in Thomson Reuters Web of Science Article | Citations
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Created: Tue, 04 Oct 2011, 09:35:57 EST by Viviane Victoria Crosthwaite on behalf of Faculty Of Engineering, Architecture & Info Tech