Simulation of the writing and erasing processes of GeSbTe and GeSbTeSn with GeN interlayers in the case of dual level DVR discs

Hyot, B, Poupinet, L, Armand, MF, Rolland, B, Marty, J, Fargeix, A, Lartigue, O, Lagrange, A, Anciant, R, Hofmann, H, Knappmann, S, Knittel, J and Richter, H (2002). Simulation of the writing and erasing processes of GeSbTe and GeSbTeSn with GeN interlayers in the case of dual level DVR discs. In: Isom/ods 2002: International Symposium On Optical Memory and Optical Data Storage Topical Meeting, Technical Digest. Joint International Symposium on Optical Memory and Optical Data Storage, Waikoloa Hi, (132-134). Jul 07-11, 2002. doi:10.1109/OMODS.2002.1028591


Author Hyot, B
Poupinet, L
Armand, MF
Rolland, B
Marty, J
Fargeix, A
Lartigue, O
Lagrange, A
Anciant, R
Hofmann, H
Knappmann, S
Knittel, J
Richter, H
Title of paper Simulation of the writing and erasing processes of GeSbTe and GeSbTeSn with GeN interlayers in the case of dual level DVR discs
Conference name Joint International Symposium on Optical Memory and Optical Data Storage
Conference location Waikoloa Hi
Conference dates Jul 07-11, 2002
Proceedings title Isom/ods 2002: International Symposium On Optical Memory and Optical Data Storage Topical Meeting, Technical Digest
Journal name Isom/ods 2002: International Symposium On Optical Memory and Optical Data Storage Topical Meeting, Technical Digest
Publication Year 2002
Sub-type Fully published paper
DOI 10.1109/OMODS.2002.1028591
ISBN 0-7803-7379-0
Start page 132
End page 134
Total pages 3
Language eng
Q-Index Code E1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Conference Paper
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Created: Sun, 11 Sep 2011, 09:49:35 EST by System User