Simulation of writing and erasing processes of GeSbTe and GeSbTeSn with GeN interlayers in the case of dual-level DVR discs

Hyot, B, Poupinet, L, Papon, AM, Armand, MF, Rolland, B, Marty, J, Fargeix, A, Lartigue, O, Lagrange, A, Anciant, R, Hofmann, H, Knappmann, S, Knittel, J and Richter, H (2003) Simulation of writing and erasing processes of GeSbTe and GeSbTeSn with GeN interlayers in the case of dual-level DVR discs. Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 42 6A: 3438-3441. doi:10.1143/JJAP.42.3438


Author Hyot, B
Poupinet, L
Papon, AM
Armand, MF
Rolland, B
Marty, J
Fargeix, A
Lartigue, O
Lagrange, A
Anciant, R
Hofmann, H
Knappmann, S
Knittel, J
Richter, H
Title Simulation of writing and erasing processes of GeSbTe and GeSbTeSn with GeN interlayers in the case of dual-level DVR discs
Journal name Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers   Check publisher's open access policy
ISSN 0021-4922
Publication date 2003-06-01
Sub-type Article (original research)
DOI 10.1143/JJAP.42.3438
Volume 42
Issue 6A
Start page 3438
End page 3441
Total pages 4
Language eng
Keyword heterogeneous nucleation
Tem
GeN interlayers
GeSbTeSn
computer simulation
Change Optical Disk
Crystallization
Layer
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
Collection: ResearcherID Downloads
 
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Created: Sun, 11 Sep 2011, 19:48:55 EST by System User