Nickel silicide formation in silicon implanted nickel

Rao, Z., Williams, J. S., Pogany, A. P., Sood, D. K. and Collins, G. A. (1995) Nickel silicide formation in silicon implanted nickel. Journal of Applied Physics, 77 8: 3782-3790. doi:10.1063/1.358553

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Author Rao, Z.
Williams, J. S.
Pogany, A. P.
Sood, D. K.
Collins, G. A.
Title Nickel silicide formation in silicon implanted nickel
Journal name Journal of Applied Physics   Check publisher's open access policy
ISSN 0021-8979
1089-7550
Publication date 1995-04-15
Sub-type Article (original research)
DOI 10.1063/1.358553
Open Access Status File (Publisher version)
Volume 77
Issue 8
Start page 3782
End page 3790
Total pages 9
Place of publication Melville, NY, United States
Publisher A I P Publishing LLC
Language eng
Formatted abstract
Nickel silicide formation during the annealing of very high dose (≥4.5×1017 ions/cm2) Si implanted Ni has been investigated, using ion beam analytical techniques, electron microscopy, and x‐ray diffraction analysis. An initial amorphous Si–Ni alloy, formed as a result of high dose ion implantation, first crystallized to Ni2Si upon annealing in the temperature region of 200–300 °C. This was followed by the formation of Ni5Si2 in the temperature region of 300–400 °C and then by Ni3Si at 400–600 °C. The Ni3Si layer was found to have an epitaxial relationship with the substrate Ni, which was determined as Ni3Si〈100〉∥Ni〈100〉 and Ni3Si〈110〉∥Ni〈110〉 for Ni(100) samples. The minimum channeling yield in the 2 MeV He Rutherford backscattering and channeling spectra of this epitaxial layer improved with higher annealing temperatures up to 600 °C, and reached a best value measured at about 8%. However, the epitaxial Ni3Si dissolved after long time annealing at 600 °C or annealing at higher temperatures to liberate soluble Si into the Ni substrate. The epitaxy is attributed to the excellent lattice match between the Ni3Si and the Ni. The annealing behavior follows the predictions of the Ni–Si phase diagram for this nickel‐rich binary system.
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
Collection: ResearcherID Downloads
 
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Citation counts: TR Web of Science Citation Count  Cited 8 times in Thomson Reuters Web of Science Article | Citations
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