Critical Thickness Determination of Inxga1-Xas/gaas Strained-Layer System by Transmission Electron-Microscopy

Zou, J, Usher, BF, Cockayne, Djh and Glaisher, R (1991). Critical Thickness Determination of Inxga1-Xas/gaas Strained-Layer System by Transmission Electron-Microscopy. In: Journal of Electronic Materials. Symp At the 1991 Annual Meeting of the Minerals, Metals and Materials Soc : Strain Relaxation in Epitaxial Films, New Orleans La, (855-859). 1991. doi:10.1007/BF02665974


Author Zou, J
Usher, BF
Cockayne, Djh
Glaisher, R
Title of paper Critical Thickness Determination of Inxga1-Xas/gaas Strained-Layer System by Transmission Electron-Microscopy
Conference name Symp At the 1991 Annual Meeting of the Minerals, Metals and Materials Soc : Strain Relaxation in Epitaxial Films
Conference location New Orleans La
Conference dates 1991
Proceedings title Journal of Electronic Materials   Check publisher's open access policy
Journal name Journal of Electronic Materials   Check publisher's open access policy
Publication Year 1991
Sub-type Fully published paper
DOI 10.1007/BF02665974
ISSN 0361-5235
Volume 20
Issue 10
Start page 855
End page 859
Total pages 5
Language eng
Keyword Critical Thickness
Misfit Dislocation
Transmission Electron Microscopy
Inxga1-Xas/gaas
Strained-Layer System
Thin-Films
Dislocations
Misfit
Epitaxy
Q-Index Code E1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Conference Paper
Collection: ResearcherID Downloads
 
Versions
Version Filter Type
Citation counts: TR Web of Science Citation Count  Cited 28 times in Thomson Reuters Web of Science Article | Citations
Google Scholar Search Google Scholar
Created: Sat, 10 Sep 2011, 13:20:21 EST by System User