Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate

Zou, J, Liao, XZ, Cockayne, DJH and Leon, R (1999) Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate. Physical Review B, 59 19: 12279-12282. doi:10.1103/PhysRevB.59.12279

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Author Zou, J
Liao, XZ
Cockayne, DJH
Leon, R
Title Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate
Journal name Physical Review B   Check publisher's open access policy
ISSN 0163-1829
Publication date 1999-05
Sub-type Article (original research)
DOI 10.1103/PhysRevB.59.12279
Open Access Status File (Publisher version)
Volume 59
Issue 19
Start page 12279
End page 12282
Total pages 4
Language eng
Keyword Strain Distribution
Islands
Growth
Gaas
Shape
Ge
Luminescence
Behavior
Spectra
Si(001)
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
Collection: ResearcherID Downloads
 
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Citation counts: TR Web of Science Citation Count  Cited 43 times in Thomson Reuters Web of Science Article | Citations
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