Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon

Wong-Leung, J, Fatima, S, Jagadish, C, Fitz Gerald, JD, Chou, CT, Zou, J and Cockayne, DJH (2000) Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon. Journal of Applied Physics, 88 3: 1312-1318. doi:10.1063/1.373819

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Author Wong-Leung, J
Fatima, S
Jagadish, C
Fitz Gerald, JD
Chou, CT
Zou, J
Cockayne, DJH
Title Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon
Journal name Journal of Applied Physics   Check publisher's open access policy
ISSN 0021-8979
Publication date 2000-08
Sub-type Article (original research)
DOI 10.1063/1.373819
Open Access Status File (Publisher version)
Volume 88
Issue 3
Start page 1312
End page 1318
Total pages 7
Language eng
Keyword (111)dislocation Loops
(113)rodlike Defects
Ion
Damage
Irradiation
Diffusion
Evolution
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
Collection: ResearcherID Downloads
 
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Created: Sat, 10 Sep 2011, 13:07:40 EST by System User on behalf of Learning and Research Services (UQ Library)