Ion-beam-induced dissociation and bubble formation in GaN

Kucheyev, S. O., Williams, J. S., Zou, J., Jagadish, C. and Li, G. (2000) Ion-beam-induced dissociation and bubble formation in GaN. Applied Physics Letters, 77 22: 3577-3579. doi:10.1063/1.1330221

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Author Kucheyev, S. O.
Williams, J. S.
Zou, J.
Jagadish, C.
Li, G.
Title Ion-beam-induced dissociation and bubble formation in GaN
Journal name Applied Physics Letters   Check publisher's open access policy
ISSN 0003-6951
1077-3118
Publication date 2000-11-27
Sub-type Article (original research)
DOI 10.1063/1.1330221
Open Access Status File (Publisher version)
Volume 77
Issue 22
Start page 3577
End page 3579
Total pages 3
Place of publication Melville, NY, United States
Publisher AIP Publishing
Language eng
Abstract Structural studies reveal that heavy ion bombardment of GaN causes amorphization and anomalous swelling of the implanted region as a result of the formation of a porous structure. Results strongly suggest that such a porous structure consists of N2 gas bubbles embedded into a highly N-deficient amorphous GaN matrix. The evolution of the porous structure in amorphous GaN appears to be a result of stoichiometric imbalance where N- and Ga-rich regions are produced by ion bombardment. Prior to amorphization, ion bombardment does not produce a porous structure due to very efficient dynamic annealing processes in the crystalline phase.
Keyword Amorphization
Implantation
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Non-UQ

Document type: Journal Article
Sub-type: Article (original research)
Collection: School of Mechanical & Mining Engineering Publications
 
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