Epitaxial growth of Bi2Se3 topological insulator thin films on Si (111)

He, Liang, Xiu, Faxian, Wang, Yong, Fedorov, Alexei V., Huang, Guan, Kou, Xufeng, Lang, Murong, Beyermann, Ward P., Zou, Jin and Wang, Kang L. (2011). Epitaxial growth of Bi2Se3 topological insulator thin films on Si (111). In: Plenary and invited papers from the 30th International Conference on the Physics of Semiconductors. 30th International Conference on the Physics of Semiconductors (ICPS-30), Seoul, South Korea, (103702.1-103702.6). 25-30 July 2010. doi:10.1063/1.3585673

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Author He, Liang
Xiu, Faxian
Wang, Yong
Fedorov, Alexei V.
Huang, Guan
Kou, Xufeng
Lang, Murong
Beyermann, Ward P.
Zou, Jin
Wang, Kang L.
Title of paper Epitaxial growth of Bi2Se3 topological insulator thin films on Si (111)
Formatted title
Epitaxial growth of Bi2Se3 topological insulator thin films on Si (111)
Conference name 30th International Conference on the Physics of Semiconductors (ICPS-30)
Conference location Seoul, South Korea
Conference dates 25-30 July 2010
Proceedings title Plenary and invited papers from the 30th International Conference on the Physics of Semiconductors   Check publisher's open access policy
Journal name Journal of Applied Physics   Check publisher's open access policy
Place of Publication College Park, MD, United States
Publisher American Institute of Physics
Publication Year 2011
Sub-type Fully published paper
DOI 10.1063/1.3585673
Open Access Status File (Publisher version)
ISSN 0021-8979
1089-7550
Volume 109
Issue 10
Start page 103702.1
End page 103702.6
Total pages 6
Collection year 2012
Language eng
Formatted Abstract/Summary
In this paper, we report the epitaxial growth of Bi2Se3 thin films on Si (111) substrate, using molecular beam epitaxy (MBE). We show that the as-grown samples have good crystalline quality, and their surfaces exhibit terracelike quintuple layers. Angel-resolved photoemission experiments demonstrate single-Dirac-conelike surface states. These results combined with the temperature- and thickness-dependent magneto-transport measurements, suggest the presence of a shallow impurity band. Below a critical temperature of ∼100K, the surface states of a 7 nm thick film contribute up to 50% of the total conduction.
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ
Additional Notes Article # 103702

 
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