Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD

Guo, Y., Zou, J., Joyce, H. J., Gao, Q., Tan, H. H. and Jagadish, C. (2010). Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD. In: COMMAD 2010 Proceedings: 2010 Conference on Optoelectronic and Microelectronic Materials and Devices. 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD), Canberra, A.C.T., Australia, (51-52). 12-15 December 2010. doi:10.1109/COMMAD.2010.5699774

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Author Guo, Y.
Zou, J.
Joyce, H. J.
Gao, Q.
Tan, H. H.
Jagadish, C.
Title of paper Effect of high temperature post-annealing on sidewalls of GaAs NWs grown by MOCVD
Conference name 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD)
Conference location Canberra, A.C.T., Australia
Conference dates 12-15 December 2010
Proceedings title COMMAD 2010 Proceedings: 2010 Conference on Optoelectronic and Microelectronic Materials and Devices
Journal name Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Place of Publication Piscataway, NJ, U.S.A.
Publisher IEEE Xplore
Publication Year 2010
Sub-type Poster
DOI 10.1109/COMMAD.2010.5699774
Open Access Status
ISBN 9781424473342
9781424473328
ISSN 1097-2137
Start page 51
End page 52
Total pages 2
Collection year 2011
Language eng
Abstract/Summary The sidewall facets of GaAs nanowires (NWs) were studied. It has been found that the sidewalls of GaAs NWs grown at 450 °C are {112} facets. However, the sidewalls of GaAs NWs start to become {110} during the postannealing at 650 °C for 30 min.
Q-Index Code EX
Q-Index Status Provisional Code
Institutional Status UQ
Additional Notes Poster Session 1

Document type: Conference Paper
Collections: School of Mechanical & Mining Engineering Publications
Non HERDC
 
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Created: Fri, 06 May 2011, 12:40:13 EST by Sally Beard on behalf of School of Mechanical and Mining Engineering