Electron-beam-induced freezing of a positive tone EUV resist for use in directed self-assembly applications

Cheng, Han-Hao, Keen, Imelda, Yu, Anguang, Chuang, Ya-Mi, Blakey, Idriss, Jack, Kevin S., Leeson, Michael J., Younkin, Todd R. and Whittaker, Andrew K. (2011). Electron-beam-induced freezing of a positive tone EUV resist for use in directed self-assembly applications. In: , Proceedings of SPIE - International Society for Optical Engineering. Alternative Lithographic Technologies III, San Jose, CA, United States, (79701V.1-79701V.9). 1-3 March 2011.

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Author Cheng, Han-Hao
Keen, Imelda
Yu, Anguang
Chuang, Ya-Mi
Blakey, Idriss
Jack, Kevin S.
Leeson, Michael J.
Younkin, Todd R.
Whittaker, Andrew K.
Title of paper Electron-beam-induced freezing of a positive tone EUV resist for use in directed self-assembly applications
Conference Paper Type Fully Published Paper
Conference name Alternative Lithographic Technologies III
DOI 10.1117/12.881491
Conference location San Jose, CA, United States
Conference dates 1-3 March 2011
Proceedings title Proceedings of SPIE - International Society for Optical Engineering
Journal name Alternative Lithographic Technologies III
Place published Bellingham, WA, United States
Publisher SPIE - International Society for Optical Engineering
Publication date 2011
Volume number 7970
ISBN 9780819485298
ISSN 0277-786X; 1996-756X
Start page 79701V.1
End page 79701V.9
Total pages 9
Collection year 2012
Language eng
Abstract/Summary The commercialization of 32 nm lithography has been made possible by using double patterning, a technique that allows for an increased pattern density, potentially, through resist freezing and high precision pattern registration. Recent developments in directed self assembly (DSA) also uses resist freezing for stabilizing positive tone resists used in graphoepitaxy. We have developed a method of patterning an open source, positive tone EUV resist using electron beam lithography (EBL), and studied a novel way of freezing a positive tone EUV photoresists through electron beam induced crosslinking. Through metrological analysis, crosslinked pattern was observed to retain consistent critical dimensions (CD) and line-edge roughness (LER) after they were annealed at temperatures higher than the glass transition of the photoresist. This process has been used to freeze patterned EUV photoresists, which have been subsequently used for directed self assembly of PS-b-PMMA and has potential applications in double patterning in an LFLE scenario.
Keyword Block copolymer
Directed self assembly
Electron beam lithography
Resist freezing
EUV
Q-Index Code E1
Q-Index Status Confirmed Code
Institutional Status UQ
Additional Notes Article # 79701V

 
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Created: Wed, 04 May 2011, 12:01:38 EST by Dr Elliot Cheng on behalf of Aust Institute for Bioengineering & Nanotechnology