Amorphous SiOx nanowires catalyzed by metallic Ge for optoelectronic applications

Nie, TX, Chen, ZG, Wu, YQ, Lin, JH, Zhang, JZ, Fan, YL, Yang, XJ, Jiang, ZM and Zou, J (2011) Amorphous SiOx nanowires catalyzed by metallic Ge for optoelectronic applications. Journal of Alloys And Compounds, 509 9: 3978-3984.


Author Nie, TX
Chen, ZG
Wu, YQ
Lin, JH
Zhang, JZ
Fan, YL
Yang, XJ
Jiang, ZM
Zou, J
Title Amorphous SiOx nanowires catalyzed by metallic Ge for optoelectronic applications
Journal name Journal of Alloys And Compounds   Check publisher's open access policy
ISSN 0925-8388
1873-4669
Publication date 2011-03
Year available 2011
Sub-type Article (original research)
DOI 10.1016/j.jallcom.2010.12.199
Volume 509
Issue 9
Start page 3978
End page 3984
Total pages 7
Place of publication Amsterdam , The Netherlands
Publisher Elsevier
Collection year 2012
Language eng
Abstract Amorphous SiOx nanowires, with diameters of ∼20nm and lengths of tens of m, were grown from self-organized GeSi quantum dots or GeSi alloy epilayers on Si substrates. The morphologies and yield of these amorphous nanowires depend strongly upon the synthesis temperature. Comparative experiments indicate that the present SiOx nanowires are induced by metallic Ge as catalysts via the solid liquid solid growth mechanism. Two broad peaks centered at 410nm and 570nm were observed in photoluminescence spectrum, indicating that such SiOx nanowires have the potential applications in white light-emitting diodes, full-colour display, full-colour indicator and light sources.
Keyword SiOx nanowires
Metallic Ge catalysts
Electron microscopy
Visible emission
Growth mechanism
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ
Additional Notes Available online 4 January 2011

Document type: Journal Article
Sub-type: Article (original research)
Collections: Official 2012 Collection
Centre for Microscopy and Microanalysis Publications
 
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Created: Sun, 20 Mar 2011, 00:10:57 EST