Ambipolar organic field-effect transistor fabricated by co-evaporation of pentacene and N,N '-ditridecylperylene-3,4,9,10-tetracarboxylic diimide

Unni, K. N. Narayanan, Pandey, Ajay K., Alem, Salima and Nunzi, Jean-Michel (2006) Ambipolar organic field-effect transistor fabricated by co-evaporation of pentacene and N,N '-ditridecylperylene-3,4,9,10-tetracarboxylic diimide. Chemical Physics Letters, 421 4-6: 554-557. doi:10.1016/j.cplett.2006.01.113


Author Unni, K. N. Narayanan
Pandey, Ajay K.
Alem, Salima
Nunzi, Jean-Michel
Title Ambipolar organic field-effect transistor fabricated by co-evaporation of pentacene and N,N '-ditridecylperylene-3,4,9,10-tetracarboxylic diimide
Journal name Chemical Physics Letters   Check publisher's open access policy
ISSN 0009-2614
1873-4448
Publication date 2006-04
Sub-type Article (original research)
DOI 10.1016/j.cplett.2006.01.113
Volume 421
Issue 4-6
Start page 554
End page 557
Total pages 4
Place of publication Amsterdam, Netherlands
Publisher Elsevier BV
Language eng
Abstract Organic field-effect transistors were fabricated where the active semiconductor layer consisted of a co-evaporated film of pentacene and a perylene derivative, N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide. The device characteristics were evaluated in an oxygen-free environment. The field-effect transistor showed excellent ambipolar operation with field-effect hole mobility of 0.09 cm2 V-1 s-1 and field-effect electron mobility of 9.3 × 10-3 cm2 V-1 s-1. The threshold voltage for p-channel operation was -18 V and the same for n-channel operation was 15 V. This ambipolar device could be a building block to form flexible integrated circuits with low-power consumption and ease of design.
Keyword Thin-film transistors
N-type
Heterostructure
Inverters
Layer
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Non-UQ

Document type: Journal Article
Sub-type: Article (original research)
Collection: School of Chemistry and Molecular Biosciences
 
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Created: Thu, 10 Mar 2011, 10:03:44 EST