Gate-controlled light emitting diodes

Namdas, Ebinazar B., Swensen, James S., Ledochowitsch, Peter, Yuen, Jonathan D., Moses, Daniel and Heeger, Alan J. (2008) Gate-controlled light emitting diodes. Advanced Materials, 20 7: 1321-1324. doi:10.1002/adma.200701944


Author Namdas, Ebinazar B.
Swensen, James S.
Ledochowitsch, Peter
Yuen, Jonathan D.
Moses, Daniel
Heeger, Alan J.
Title Gate-controlled light emitting diodes
Journal name Advanced Materials   Check publisher's open access policy
ISSN 0935-9648
1521-4095
Publication date 2008-04-04
Sub-type Article (original research)
DOI 10.1002/adma.200701944
Volume 20
Issue 7
Start page 1321
End page 1324
Total pages 4
Place of publication Weinheim, Germany
Publisher Wiley - VCH Verlag
Language eng
Formatted abstract
A study has reported on p-channel gate controlled light emitting diodes (LED) fabricated by spin casting an electroluminescent polymer onto high dielectric constant polyvinylidene fluoride (PVDF) with Au as the source for hole injection into the channel and Ca as the source for electrons. The study also analyzed light emission in a transistor-like configuration using a spin cast electroluminescent polymer and a bilayer of high materials (PVDF on silicon nitride) as the gate dielectric. The transistor exhibited excellent p-type electrical characteristics with a mobility of 7.4 × 10-5 cm2 V-1s-1 and current on/off ratio of 10 3. The study showed that light emission was visible with brightness exceeding 310cd m-2 at controlled quantum efficiency of 0.5%. The gate controlled bright light emission also suggests novel applications such as simplified pixels in a flat panel display and electrically driven organic lasers.
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Non-UQ

Document type: Journal Article
Sub-type: Article (original research)
Collection: School of Mathematics and Physics
 
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Created: Wed, 09 Mar 2011, 13:18:30 EST