Extraction of RF equivalent circuit and semiconductor parameters of SOS MOSFETs from S-Parameter measurements

Boubals, A, Bertling, K., Domyo, Hiroshi, Brawley, A., Rakic, A. D. and Yeow, Y. (2010). Extraction of RF equivalent circuit and semiconductor parameters of SOS MOSFETs from S-Parameter measurements. In: 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD). Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD'2010), Canberra, ACT, Australia, (147-148). 12-15 December 2010. doi:10.1109/COMMAD.2010.5699709


Author Boubals, A
Bertling, K.
Domyo, Hiroshi
Brawley, A.
Rakic, A. D.
Yeow, Y.
Title of paper Extraction of RF equivalent circuit and semiconductor parameters of SOS MOSFETs from S-Parameter measurements
Conference name Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD'2010)
Conference location Canberra, ACT, Australia
Conference dates 12-15 December 2010
Proceedings title 2010 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD)
Journal name Proceedings Conference on Optoelectronic and Microelectronic Materials and Devices
Place of Publication Piscataway, NJ, U.S.A.
Publisher IEEE
Publication Year 2010
Sub-type Fully published paper
DOI 10.1109/COMMAD.2010.5699709
ISBN 9781424473342
ISSN 1097-2137
Start page 147
End page 148
Total pages 2
Collection year 2011
Language eng
Abstract/Summary This paper describes the use of on-wafer measured microwave scattering parameters (S-parameters) for the extraction of RF equivalent circuit elements and semiconductor parameters of an SOS MOSFET. © Copyright 2011 IEEE – All Rights Reserved
Keyword Length measurement
Logic gates
Semiconductor device measurement
Q-Index Code EX
Q-Index Status Confirmed Code
Institutional Status UQ
Additional Notes Poster Session 2

 
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Created: Mon, 28 Feb 2011, 14:14:42 EST by Karl Bertling on behalf of School of Information Technol and Elec Engineering