Investigating the origin of Fermi level pinning in Ge Schottky junctions using epitaxially grown ultrathin MgO films

Zhou, Yi, Han, Wei, Wang, Yong, Xiu, Faxian, Zou, Jin, Kawakami, R. K. and Wang, Kang. L. (2010) Investigating the origin of Fermi level pinning in Ge Schottky junctions using epitaxially grown ultrathin MgO films. Applied Physics Letters, 96 10: 102103-1-102103-3. doi:10.1063/1.3357423

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Author Zhou, Yi
Han, Wei
Wang, Yong
Xiu, Faxian
Zou, Jin
Kawakami, R. K.
Wang, Kang. L.
Title Investigating the origin of Fermi level pinning in Ge Schottky junctions using epitaxially grown ultrathin MgO films
Journal name Applied Physics Letters   Check publisher's open access policy
ISSN 0003-6951
1520-8842
1077-3118
Publication date 2010-03-08
Sub-type Article (original research)
DOI 10.1063/1.3357423
Open Access Status File (Publisher version)
Volume 96
Issue 10
Start page 102103-1
End page 102103-3
Total pages 3
Place of publication College Park, MD, U.S.A.
Publisher American Institute of Physics
Collection year 2011
Language eng
Abstract Fermi level (FL) pinning at the Ge valence band results in a high Schottky barrier height for all metal/n-Ge contacts. The origin of this pinning effect has been ascribed to either metal induced gap states or surface states arise from the native defects at the Ge surface, such as dangling bonds. The discrepancy in the reported results/explanations is mainly due to the lack of an explicit characterization of a high quality metal/Ge or metal/ultrathin oxide/Ge junction, which should be ideally single crystalline, atomically smooth and free of process-induced defects or intermixing. We report the Schottky characteristics of high quality metal/MgO/n-Ge junctions with the ultrathin MgO epitaxially grown on Ge. We find the depinning effect displays a weak dependence on the MgO thickness, indicating the interface states due to the native defects on Ge surface are likely to play the dominant role in FL pinning. © 2010 American Institute of Physics
Keyword Interface states
Barrier
Depinning
Epitaxially grown
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ
Additional Notes Article # 102103, pp. 1-3

 
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Created: Fri, 04 Feb 2011, 09:50:51 EST by Professor Jin Zou on behalf of Centre for Microscopy and Microanalysis