Tadpole shaped Ge0.96Mn0.04 magnetic semiconductors grown on Si

Wang, Yong, Xiu, Faxian, Zou, Jin, Wang, Kang L. and Jacob, Ajey P. (2010) Tadpole shaped Ge0.96Mn0.04 magnetic semiconductors grown on Si. Applied Physics Letters, 96 5: 051905.1-051905.3. doi:10.1063/1.3297880

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Author Wang, Yong
Xiu, Faxian
Zou, Jin
Wang, Kang L.
Jacob, Ajey P.
Title Tadpole shaped Ge0.96Mn0.04 magnetic semiconductors grown on Si
Formatted title
Tadpole shaped Ge0.96Mn0.04 magnetic semiconductors grown on Si
Journal name Applied Physics Letters   Check publisher's open access policy
ISSN 0003-6951
1520-8842
1077-3118
Publication date 2010-02-01
Sub-type Article (original research)
DOI 10.1063/1.3297880
Open Access Status File (Publisher version)
Volume 96
Issue 5
Start page 051905.1
End page 051905.3
Total pages 3
Place of publication Melville, NY, U.S.A
Publisher American Institute of Physics
Collection year 2011
Language eng
Formatted abstract
Magnetic and structural properties of a Ge0.96Mn0.04 thin film grown on Si has been investigated by transmission electron microscopy and superconducting quantum interference device. Tadpole shaped coherent GeMn clusters induced by spinodal decomposition were revealed in the film. Although these coherent clusters are dominant, Mn5Ge3 precipitates can be still detectable, contributing to a complex ferromagnetism. The Ge buffer layer, by relieving the misfit strain between Si and Ge, can significantly reduce the density of lattice defects in the subsequent GeMn layer. Our findings unveil a particular morphology of GeMn clusters, which would contribute to better understand the GeMn system.
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

Document type: Journal Article
Sub-type: Article (original research)
Collections: School of Mechanical & Mining Engineering Publications
Official 2011 Collection
 
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Created: Fri, 04 Feb 2011, 09:34:53 EST by Professor Jin Zou on behalf of School of Mechanical and Mining Engineering