Grinding of silicon wafers using an ultrafine diamond wheel of a hybrid bond material

Zhang, Zhenyu, Huo, Fengwei, Wu, Yueqin and Huang, Han (2011) Grinding of silicon wafers using an ultrafine diamond wheel of a hybrid bond material. International Journal of Machine Tools and Manufacture, 51 1: 18-24. doi:10.1016/j.ijmachtools.2010.10.006

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Author Zhang, Zhenyu
Huo, Fengwei
Wu, Yueqin
Huang, Han
Title Grinding of silicon wafers using an ultrafine diamond wheel of a hybrid bond material
Journal name International Journal of Machine Tools and Manufacture   Check publisher's open access policy
ISSN 0890-6955
1879-2170
Publication date 2011-01
Year available 2010
Sub-type Article (original research)
DOI 10.1016/j.ijmachtools.2010.10.006
Volume 51
Issue 1
Start page 18
End page 24
Total pages 7
Place of publication New York, United States
Publisher Elsevier
Collection year 2011
Language eng
Abstract An ultrafine diamond wheel of a mesh size of 12,000 was fabricated by using a hybrid bond material, which consists of silicon carbide, silica and alumina. The employment of the newly developed wheel enabled excellent performance during grinding of silicon wafers. An extremely smooth surface of an average roughness of 0.6 nm was achieved. TEM examinations showed that the total thickness of the defected layer was less than 60 nm.
Keyword Silicon wafer
Surface finish
Subsurface damage
Grinding
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ
Additional Notes Available online 21 October 2010

Document type: Journal Article
Sub-type: Article (original research)
Collections: School of Mechanical & Mining Engineering Publications
Official 2011 Collection
 
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Citation counts: TR Web of Science Citation Count  Cited 20 times in Thomson Reuters Web of Science Article | Citations
Scopus Citation Count Cited 24 times in Scopus Article | Citations
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Created: Wed, 24 Nov 2010, 00:10:25 EST by Professor Han Huang on behalf of School of Mechanical and Mining Engineering