Phase transformation of single crystal silicon induced by grinding with ultrafine diamond grits

Zhang, Zhenyu, Wu, Yueqin, Guo, Dongming and Huang, Han (2011) Phase transformation of single crystal silicon induced by grinding with ultrafine diamond grits. Scripta Materialia, 64 2: 177-180. doi:10.1016/j.scriptamat.2010.09.038


Author Zhang, Zhenyu
Wu, Yueqin
Guo, Dongming
Huang, Han
Title Phase transformation of single crystal silicon induced by grinding with ultrafine diamond grits
Journal name Scripta Materialia   Check publisher's open access policy
ISSN 1359-6462
1872-8456
Publication date 2011-01
Year available 2010
Sub-type Article (original research)
DOI 10.1016/j.scriptamat.2010.09.038
Volume 64
Issue 2
Start page 177
End page 180
Total pages 4
Place of publication Oxford, United Kingdom
Publisher Pergamon
Collection year 2011
Language eng
Abstract Phase transformation of single crystal silicon (Si) was investigated under various grinding conditions using high-resolution transmission electron microscopy. Nanocrystals with sizes ranging from 6 to 20 nm of diamond cubic silicon (Si-I) and high-pressure phase (Si-III) were observed in the grinding-induced amorphous Si layers. The phase transformation pattern was found to be influenced by the thermal status involved in the grinding processes. © 2010 Acta Materialia Inc.
Keyword Transmission electron microscopy (TEM)
Semiconductors
Nanocrystalline microstructure
Plastic deformation
Phase transformations
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ

Document type: Journal Article
Sub-type: Article (original research)
Collections: School of Mechanical & Mining Engineering Publications
Official 2011 Collection
 
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Created: Wed, 24 Nov 2010, 00:07:34 EST by Professor Han Huang on behalf of School of Mechanical and Mining Engineering