TEM investigations of Si ion-implanted GaN

Zou, J., Cockayne, D. J. H., Duan, X. F., Tan, H. H., Williams, J. S., Pearton, S. J. and Stall, S. A. (1998). TEM investigations of Si ion-implanted GaN. In: Hector A. Calderon Benavides and M. Jose Yacaman, Electron microscopy 1998 : proceedings of the 14th International Congress on Electron Microscopy. 14th International Congress on Electron Microscopy, CancĂșn, Mexico, (481-482). 31 August-4 September 1998.

Author Zou, J.
Cockayne, D. J. H.
Duan, X. F.
Tan, H. H.
Williams, J. S.
Pearton, S. J.
Stall, S. A.
Title of paper TEM investigations of Si ion-implanted GaN
Conference name 14th International Congress on Electron Microscopy
Conference location CancĂșn, Mexico
Conference dates 31 August-4 September 1998
Proceedings title Electron microscopy 1998 : proceedings of the 14th International Congress on Electron Microscopy
Journal name Electron Microscopy 1998, Vol 3
Place of Publication Bristol ; Philadelphia
Publisher Institute of Physics Publishing
Publication Year 1998
Sub-type Fully published paper
ISBN 0750305681
9780750305686
075030569X
9780750305693
0750305649
9780750305648
0750305657
9780750305655
0750305665
9780750305662
0750305673
9780750305679
Editor Hector A. Calderon Benavides
M. Jose Yacaman
Volume 3
Start page 481
End page 482
Total pages 1
Language eng
Q-Index Code E1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Conference Paper
Collection: School of Mechanical & Mining Engineering Publications
 
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Created: Tue, 23 Nov 2010, 02:21:01 EST by Professor Jin Zou on behalf of School of Mechanical and Mining Engineering