Electrical and structural analysis of high-dose Si implantation in GaN

Zolper, JC, Tan, HH, Williams, JS, Zou, J, Cockayne, DJH, Pearton, SJ, Crawford, MH and Karlicek, RF (1997) Electrical and structural analysis of high-dose Si implantation in GaN. Applied Physics Letters, 70 20: 2729-2731. doi:10.1063/1.119254

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Author Zolper, JC
Tan, HH
Williams, JS
Zou, J
Cockayne, DJH
Pearton, SJ
Crawford, MH
Karlicek, RF
Title Electrical and structural analysis of high-dose Si implantation in GaN
Journal name Applied Physics Letters   Check publisher's open access policy
ISSN 0003-6951
Publication date 1997-05-19
Year available 1997
Sub-type Article (original research)
DOI 10.1063/1.119254
Open Access Status File (Publisher version)
Volume 70
Issue 20
Start page 2729
End page 2731
Total pages 3
Place of publication Melville, N.Y., U.S.A
Publisher American Institute of Physics
Language eng
Subject 0913 Mechanical Engineering
Abstract For the development of ion implantation processes for GaN to advanced devices, it is important to understand the dose dependence of impurity activation along with implantation-induced damage generation and removal. We find that Si implantation in GaN can achieve 50% activation at a dose of 1×1016 cm-2, despite significant residual damage after the 1100 °C activation anneal. The possibility that the generated free carriers are due to implantation damage alone and not Si-donor activation is ruled out by comparing the Si results to those for implantation of the neutral species Ar. Ion channeling and cross-sectional transmission electron microscopy are used to characterize the implantation-induced damage both as implanted and after a 1100 °C anneal. Both techniques confirm that significant damage remains after the anneal, which suggests that activation of implanted Si donors in GaN doses not require complete damage removal. However, an improved annealing process may be needed to further optimize the transport properties of implanted regions in GaN. © 1997 American Institute of Physics.
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
Collection: School of Mechanical & Mining Engineering Publications
 
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Created: Mon, 22 Nov 2010, 00:59:44 EST by Professor Jin Zou on behalf of School of Mechanical and Mining Engineering