Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing

Yuan, S., Kim, Y., Jagadish, C., Burke, P. T., Zou, J., Cai, D. Q., Cockayne, D. J. H. and Cohen, R. M. (1997) Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing. Applied Physics Letters, 70 10: 1269-1271. doi:10.1063/1.118549

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Author Yuan, S.
Kim, Y.
Jagadish, C.
Burke, P. T.
Zou, J.
Cai, D. Q.
Cockayne, D. J. H.
Cohen, R. M.
Title Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing
Journal name Applied Physics Letters   Check publisher's open access policy
ISSN 0003-6951
Publication date 1997-03
Sub-type Article (original research)
DOI 10.1063/1.118549
Open Access Status File (Publisher version)
Volume 70
Issue 10
Start page 1269
End page 1271
Total pages 3
Place of publication United States
Publisher American Institute of Physics
Language eng
Q-Index Code C1
Q-Index Status Provisional Code
Institutional Status Unknown

Document type: Journal Article
Sub-type: Article (original research)
Collection: School of Mechanical & Mining Engineering Publications
 
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Created: Mon, 22 Nov 2010, 00:54:55 EST by Professor Jin Zou on behalf of School of Mechanical and Mining Engineering