Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires

Paiman, S., Gao, Q., Joyce, H. J., Kim, Y., Tan, H. H., Jagadish, C., Zhang, X., Guo, Y. and Zou, J. (2010) Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires. Journal of Physics D: Applied Physics, 43 44: 445402-1-445402-6. doi:10.1088/0022-3727/43/44/445402


Author Paiman, S.
Gao, Q.
Joyce, H. J.
Kim, Y.
Tan, H. H.
Jagadish, C.
Zhang, X.
Guo, Y.
Zou, J.
Title Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires
Journal name Journal of Physics D: Applied Physics   Check publisher's open access policy
ISSN 0022-3727
1361-6463
Publication date 2010-11-10
Sub-type Article (original research)
DOI 10.1088/0022-3727/43/44/445402
Volume 43
Issue 44
Start page 445402-1
End page 445402-6
Total pages 6
Place of publication Bristol, United Kingdom
Publisher Institute of Physics Publishing
Collection year 2011
Language eng
Abstract The effects of growth temperature and V/III ratio on the morphology and crystallographic phases of InP nanowires that are grown by metal organic chemical vapour deposition have been studied. We show that higher growth temperatures or higher V/III ratios promote the formation of wurtzite nanowires while zinc-blende nanowires are favourableat lower growth temperatures and lower V/III ratios. A schematic map of distribution of zinc-blende and wurtzite structures has been developed in the range of growth temperatures (400-510 °C) and V/III ratios (44 to 700) investigated in this study. © 2010 IOP Publishing Ltd.
Keyword Chemical vapour deposition
Crystallographic phasis
InP
Wurtzite structure
Q-Index Code C1
Q-Index Status Confirmed Code
Institutional Status UQ
Additional Notes Article # 445402

 
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Created: Sun, 07 Nov 2010, 00:06:26 EST