Semiconducting properties of cup-stacked carbon nanotubes

Liu, Qingfeng, Ren, Wencai, Chen, Zhi-Gang, Yin, Lichang, Li, Feng, Cong, Hongtao and Cheng, Hui-Ming (2009) Semiconducting properties of cup-stacked carbon nanotubes. Carbon, 47 3: 731-736. doi:10.1016/j.carbon.2008.11.005


Author Liu, Qingfeng
Ren, Wencai
Chen, Zhi-Gang
Yin, Lichang
Li, Feng
Cong, Hongtao
Cheng, Hui-Ming
Title Semiconducting properties of cup-stacked carbon nanotubes
Journal name Carbon   Check publisher's open access policy
ISSN 0008-6223
Publication date 2009-03
Sub-type Article (original research)
DOI 10.1016/j.carbon.2008.11.005
Volume 47
Issue 3
Start page 731
End page 736
Total pages 6
Place of publication United Kingdom
Publisher Elsevier Ltd
Language eng
Subject 09 Engineering
Abstract The current–voltage characteristics of individual cup-stacked carbon nanotubes (CSCNTs) were investigated in situ inside the transmission electron microscope. Different from other quasi-1D carbon structures such as multi-walled carbon nanotubes, carbon nanofibers or graphitic fibers that normally behave as a metallic conductor of electrons, individual CSCNTs were found to exhibit unexpectedly semiconducting behaviors due to the special stacking microstructure of graphene layers. The band gap of the CSCNTs was obtained with the value of about 0.44 eV, in contrast to the zero-gap semiconducting quasi-2D graphene. These findings provide new information about the effect of the stacking graphene layers on their electronic properties, and will widen the usefulness of such stacking structure for the application in nanoelectronics.
Q-Index Code C1
Q-Index Status Provisional Code

Document type: Journal Article
Sub-type: Article (original research)
Collection: School of Mechanical & Mining Engineering Publications
 
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Created: Thu, 30 Sep 2010, 11:36:34 EST by Laura McTaggart on behalf of Faculty Of Engineering, Architecture & Info Tech