Magnetic properties and antiferromagnetic coupling in inhomogeneous Zn 1-xFexO magnetic semiconductor

邓江峡 Deng, Jiang-Xia, 颜世申 Yan, Shi-Shen, 梅良模 Mei, Liang-Mo, 刘建平 Liu, J. P., Altuncevahir, B., Chakka, V., 王勇 Wang, Yong, 张泽 Zhang, Ze, 孙向成 Sun, Xiang-Cheng, Lian, J. and Sun, K. (2009) Magnetic properties and antiferromagnetic coupling in inhomogeneous Zn 1-xFexO magnetic semiconductor. Chinese Physics Letters, 26 2: 027502-1-027502-4. doi:10.1088/0256-307X/26/2/027502


Author 邓江峡 Deng, Jiang-Xia
颜世申 Yan, Shi-Shen
梅良模 Mei, Liang-Mo
刘建平 Liu, J. P.
Altuncevahir, B.
Chakka, V.
王勇 Wang, Yong
张泽 Zhang, Ze
孙向成 Sun, Xiang-Cheng
Lian, J.
Sun, K.
Title Magnetic properties and antiferromagnetic coupling in inhomogeneous Zn 1-xFexO magnetic semiconductor
Formatted title
Magnetic properties and antiferromagnetic coupling in inhomogeneous Zn 1-xFexO magnetic semiconductor
Journal name Chinese Physics Letters   Check publisher's open access policy
ISSN 0256-307X
1741-3540
Publication date 2009-02
Sub-type Article (original research)
DOI 10.1088/0256-307X/26/2/027502
Volume 26
Issue 2
Start page 027502-1
End page 027502-4
Total pages 4
Place of publication Beijing, China
Publisher Institute of Physics Publishing
Language eng
Subject 01 Mathematical Sciences
02 Physical Sciences
Formatted abstract
Zn1-xFexO inhomogeneous oxide magnetic semiconductor films with high Fe concentration are prepared by sputtering, and fast annealing is carried out at different temperatures. It is found that magnetic properties are greatly modulated by controlling the composition inhomogeneity and subsequently fast annealing. Both ferromagnetic and paramagnetic components are found to coexist in the as-deposited Zn1-xFexO magnetic semiconductor. In particular, the antiferromagnetic coupling between the neighbouring local ferromagnetic regions is found in the as-deposited Zn 0.23Fe0.77 O film, and the antiferromagnetic coupling strength increases with increasing temperature from 110 K to 300 K. We believe that this unusual antiferromagnetic coupling is mediated by thermally activated hopping carriers.
© 2009 Chinese Physical Society and IOP Publishing Ltd.
Keyword Condensed matter
Semiconductors
Surfaces
Interfaces
Thin films
Q-Index Code C1
Q-Index Status Provisional Code

Document type: Journal Article
Sub-type: Article (original research)
Collections: Excellence in Research Australia (ERA) - Collection
School of Mechanical & Mining Engineering Publications
 
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