Fabrication of bismuth nanowire devices using focused ion beam milling

Cheng, H. H., Alkaisi, M. M., Wu, S. E. and Liu, C. P. (2009). Fabrication of bismuth nanowire devices using focused ion beam milling. In: Shaun C. Hendy and Ian W. M. Brown, AIP Conference Proceedings. Advanced Materials and Nanotechnology: Proceedings of the International Conference (AMN-4). AMN-4: The MacDiarmid Institute for Advanced Materials and Nanotechnology Conference, Dunedin, New Zealand, (48-51). 8-12 February 2009. doi:10.1063/1.3203244


Author Cheng, H. H.
Alkaisi, M. M.
Wu, S. E.
Liu, C. P.
Title of paper Fabrication of bismuth nanowire devices using focused ion beam milling
Conference name AMN-4: The MacDiarmid Institute for Advanced Materials and Nanotechnology Conference
Conference location Dunedin, New Zealand
Conference dates 8-12 February 2009
Convener MacDiarmid Institute for Advanced Materials and Nanotechnology
Proceedings title AIP Conference Proceedings. Advanced Materials and Nanotechnology: Proceedings of the International Conference (AMN-4)   Check publisher's open access policy
Journal name Advanced Materials and Nanotechnology, Proceedings   Check publisher's open access policy
Place of Publication New York NY United States
Publisher Springer
Publication Year 2009
Sub-type Fully published paper
DOI 10.1063/1.3203244
Open Access Status
ISBN 9780735406889
073540688X
ISSN 0094-243X
1551-7616
1935-0465
Editor Shaun C. Hendy
Ian W. M. Brown
Volume 1151
Start page 48
End page 51
Total pages 3
Language eng
Formatted Abstract/Summary
In this work, a focused ion beam (FIB) milling process has been developed to fabricate 50nm Bi nanowire and transistor structures using FEI-200 dual beam FIB system. For the fabrication, 50nm bismuth film was thermally evaporated through EBL patterned PMMA windows onto SiO2 substrates with pre-defined contact pads. Bi nanowire widths ranging from 30nm to 100nm have been successfully fabricated by milling out unwanted areas using 30KeV Ga+ ion beam. A single-pixel-line ion beam blanking technique has been utilised to fabricate Bi nanowire as small as 30nm in diameter and few micrometers long. In order to form good ohmic contacts for sub 50nm bismuth nanowires, a drilland- fill process has been developed using FIB to sputter away the surface oxide of bismuth after the in-situ platinum nanowire contacts deposition. To our knowledge, this is the first time a focused ion beam process has been used to fabricate bismuth nanowire. The fabricated Bi nanowires were electrically characterised using a semiconductor analyzer that showed good ohmic contact to the electrodes. In this paper, the fabrication experiments and the characterization results for Bi nanowires as small as 50nm in diameter are presented. Several FIB issues involved in Bi device making and ohmic contacts to Bi nanowires will also be discussed.
Subjects 1007 Nanotechnology
0910 Manufacturing Engineering
0912 Materials Engineering
Keyword Bismuth
FIB
Milling
Drill-and-fill
Semimetal
Bismuth compounds
Nanostructured materials
Evaporation
Machining
Scanning electron microscopy
Q-Index Code E1
Q-Index Status Provisional Code
Institutional Status UQ

 
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Created: Sun, 22 Aug 2010, 00:11:16 EST